Al-Hmoud Mohannad Mahmoud Ali, Gul Banat, Salman Khan Muhammad, Aziz Siti Maisarah, Ullah Zia, Benabdellah Ghlamallah, Binzowaimil Ayed M
Department of Physics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU) Riyadh 13318 Saudi Arabia.
National University of Sciences and Technology (NUST) Islamabad Pakistan.
RSC Adv. 2025 Aug 29;15(37):30782-30792. doi: 10.1039/d5ra03284a. eCollection 2025 Aug 22.
Ternary chalcogenides have attracted much interest because of their potential for use in sustainable energy applications due to their tunable electronic, optical, and transport characteristics. This work examined the structural, electronic, optoelectronic, and thermoelectric properties of novel BiPbSe and BiPbTe chalcogenides through density functional theory. The predicted energy gap values measured with the TB-mBJ and PBE-GGA are 1.12 and 0.71 eV for BiPbSe and 1.08 and 0.82 eV for BiPbTe respectively. Both materials behave as semiconductors and have direct energy gaps, which makes them attractive for solar energy applications. COHP study illustrates that strong Bi-chalcogen bonding characterizes the valence band, whereas antibonding states prevail above the Fermi level in both BiPbSe and BiPbTe. Their promise as absorber materials in photovoltaic devices is highlighted by optical investigations that show considerable absorption in the visible and infrared ranges, high dielectric constants, and higher photoconversion performance. The Seebeck coefficient, lattice thermal conductivity, and electrical conductivity were employed to assess thermoelectric features. These ternary materials are suitable for integrated solar energy collecting and conversion systems because of their outstanding optical absorption and thermoelectric potential. The structure-property interactions of these materials are explained by this study, opening the door for testing and more optimization for improved energy devices.
三元硫族化物因其可调谐的电子、光学和传输特性在可持续能源应用中的潜力而备受关注。这项工作通过密度泛函理论研究了新型BiPbSe和BiPbTe硫族化物的结构、电子、光电和热电性质。用TB-mBJ和PBE-GGA测量的预测能隙值,BiPbSe分别为1.12和0.71 eV,BiPbTe分别为1.08和0.82 eV。这两种材料均表现为半导体且具有直接能隙,这使其在太阳能应用中具有吸引力。COHP研究表明,强Bi-硫族键是价带的特征,而在BiPbSe和BiPbTe中,反键态在费米能级以上占主导。光学研究突出了它们作为光伏器件吸收材料的前景,这些研究表明在可见光和红外范围内有相当大的吸收、高介电常数和更高的光转换性能。利用塞贝克系数、晶格热导率和电导率来评估热电特性。这些三元材料因其出色的光吸收和热电潜力而适用于集成太阳能收集和转换系统。本研究解释了这些材料的结构-性能相互作用,为测试和进一步优化以改进能量装置打开了大门。