Wang Yiwei, Qin Qin, Chen Jingyue, Lu Xiang, Yin Jialu, Liu Ranhao, Jiang Peijie, Kuang Jianlei, Cao Wenbin
Department of Inorganic Nonmetallic Materials, School of Material Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
Nanomaterials (Basel). 2025 Aug 22;15(17):1298. doi: 10.3390/nano15171298.
To investigate the synthesis route and electromagnetic wave absorption performance of SiC nanowires (SiC-NWs), boron was simultaneously employed as both a catalyst and a dopant, and the doped nanowires were embedded into a silicone matrix to fabricate SiC-NW/silicone composites with enhanced mechanical properties and microwave attenuation. Boric acid significantly increased the yield of SiC-NWs, while boron doping enhanced both conductive and relaxation losses. The subsequent nanowire pull-out mechanism improved the tensile strength of the composites by 185%, reaching 5.7 MPa at a filler loading of 5 wt%. The three-dimensional SiC-NW network provided synergistic dielectric and conductive losses, along with good impedance matching, achieving a minimum reflection loss of -35 dB at a thickness of 3.5 mm and an effective absorption bandwidth of 4.2 GHz within the 8.2-12.4 GHz range, with a nanowire content of only 5 wt%.
为了研究碳化硅纳米线(SiC-NWs)的合成路线和电磁波吸收性能,硼同时用作催化剂和掺杂剂,并将掺杂的纳米线嵌入有机硅基体中,以制备具有增强机械性能和微波衰减的SiC-NW/有机硅复合材料。硼酸显著提高了SiC-NWs的产率,而硼掺杂增强了传导损耗和弛豫损耗。随后的纳米线拔出机制使复合材料的拉伸强度提高了185%,在填料含量为5 wt%时达到5.7 MPa。三维SiC-NW网络提供了协同介电损耗和传导损耗,以及良好的阻抗匹配,在厚度为3.5 mm时实现了-35 dB的最小反射损耗,在8.2-12.4 GHz范围内的有效吸收带宽为4.2 GHz,纳米线含量仅为5 wt%。