Nordenson I, Mild K H, Andersson G, Sandström M
Department of Medical Genetics, University of Umeå, Sweden.
Bioelectromagnetics. 1994;15(4):293-301. doi: 10.1002/bem.2250150404.
Our recent studies have shown a significant increase in the frequency of chromosomal aberrations in human amniotic cells after exposure to a sinusoidal 50 Hz, 30 microT (rms) magnetic field. To evaluate further interactions between chromosomes and electromagnetic fields, we have analyzed the effects of intermittent exposure. Amniotic cells were exposed for 72 h to a 50 Hz, 30 microT (rms) magnetic field in a 15 s on and 15 s off fashion. Eight experiments with cells from different fetuses were performed. The results show a 4% mean frequency of aberrations among exposed cells compared to 2% in sham-exposed cells. The difference is statistically significant, with P < 0.05 both excluding and including gaps. In another series of eight experiments, the cells were exposed in the same way but with the field on for 2 s and off for 20 s. Also in these experiments a similar increase in the frequency of chromosomal aberrations was seen, but only when the analysis included gaps. Continuous exposure for 72 h to 300 microT, 50 Hz, did not increase the frequency of chromosomal aberrations. The background electromagnetic fields at different locations within the two incubators used was carefully checked and was nowhere found to exceed 120 nT. Likewise, the background level of chromosomal aberrations in cells cultured at different locations in the incubators showed no significant interculture differences.
我们最近的研究表明，人类羊膜细胞暴露于50Hz、30微特斯拉（均方根值）的正弦磁场后，染色体畸变频率显著增加。为了进一步评估染色体与电磁场之间的相互作用，我们分析了间歇性暴露的影响。羊膜细胞以15秒开启和15秒关闭的方式暴露于50Hz、30微特斯拉（均方根值）的磁场中72小时。对来自不同胎儿的细胞进行了8次实验。结果显示，暴露细胞中的畸变平均频率为4%，而假暴露细胞中的畸变平均频率为2%。该差异具有统计学意义，无论是否包括裂隙，P均<0.05。在另一组8次实验中，细胞以相同方式暴露，但磁场开启2秒、关闭20秒。同样在这些实验中，也观察到染色体畸变频率有类似增加，但仅在分析包括裂隙时出现。连续72小时暴露于300微特斯拉、50Hz的磁场中，并未增加染色体畸变频率。仔细检查了所使用的两个培养箱内不同位置的背景电磁场，未发现任何一处超过120纳特斯拉。同样，在培养箱内不同位置培养的细胞中，染色体畸变的背景水平在不同培养之间未显示出显著差异。
