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LamB蛋白第151位残基在噬菌体λ吸附中的作用:氨基酸取代可能产生的空间效应。

A role for residue 151 of LamB in bacteriophage lambda adsorption: possible steric effect of amino acid substitutions.

作者信息

Charbit A, Werts C, Michel V, Klebba P E, Quillardet P, Hofnung M

机构信息

Unité de Programmation Moléculaire et Toxicologie Génétique, Centre National de la Recherche Scientifique URA 1444, Institut Pasteur, Paris, France.

出版信息

J Bacteriol. 1994 Jun;176(11):3204-9. doi: 10.1128/jb.176.11.3204-3209.1994.

Abstract

LamB is the cell surface receptor for bacteriophage lambda. LamB missense mutations yielding resistance to lambda have been previously grouped in two classes. Class I mutants block growth of lambda with wild-type host range (lambda h+) but support growth of one-step extended-host-range mutants (lambda h). Class II mutants block lambda h but support growth of two-step extended host range mutants (lambda hh*). While Class I mutations occur at 11 different amino acid sites, in five distinct portions of LamB, all the Class II mutations analyzed previously correspond to the same G-to-D change at amino acid 151. We generated by in vitro mutagenesis four different new substitutions at site 151 (to S, V, R, and C). Two of the mutants (G-151-->V [G151V] and G151R) were of Class II, while the two others (G151S and G151C) were of Class I, demonstrating that not only the site but also the nature of the substitutions at residue 151 was critical for the phage sensitivity phenotypes. The introduction of a negatively charged, a positively charged, or an aliphatic nonpolar residue at site 151 of LamB prevented both lambda h+ and lambda h adsorption, indicating that the block is not due to a charge effect. In contrast to G151D, which was sensitive to all the lambda hh* phages, G151V and G151R conferred sensitivity to only four of the five lambda hh* phages. Thus, G151V and G151R represent a new subclass of Class II LamB mutations that is more restrictive with respect to the growth of lambda hh*. Our results agree with the hypothesis that residue 151 belongs to an accessibility gate controlling the access to the phage tight-binding site and that substitutions at this residue affect the access of the phage to the binding site in relation to the size of the substitute side chain (surface area): the most restrictive changes are G151V and G151R, followed to a lesser extent by G151D and they by G151S and G151C.

摘要

LamB是噬菌体λ的细胞表面受体。先前已将产生对λ抗性的LamB错义突变分为两类。I类突变体阻止具有野生型宿主范围的λ(λh +)生长,但支持一步扩展宿主范围突变体(λh)生长。II类突变体阻止λh生长,但支持两步扩展宿主范围突变体(λhh*)生长。虽然I类突变发生在LamB的五个不同部分的11个不同氨基酸位点,但先前分析的所有II类突变都对应于氨基酸151处相同的G到D变化。我们通过体外诱变在151位点产生了四个不同的新取代(变为S、V、R和C)。其中两个突变体(G-151→V [G151V]和G151R)属于II类,而另外两个(G151S和G151C)属于I类,这表明不仅位点,而且151位残基取代的性质对噬菌体敏感性表型也至关重要。在LamB的151位点引入带负电荷、带正电荷或脂肪族非极性残基会阻止λh +和λh吸附,这表明这种阻断不是由于电荷效应。与对所有λhh噬菌体敏感的G151D不同,G151V和G151R仅对五个λhh噬菌体中的四个具有敏感性。因此,G151V和G151R代表II类LamB突变的一个新亚类,其对λhh*生长的限制更大。我们的结果与以下假设一致:151位残基属于控制噬菌体紧密结合位点 access的可及性门,并且该残基处的取代根据取代侧链的大小(表面积)影响噬菌体对结合位点的 access:最具限制性的变化是G151V和G151R,其次是G151D,然后是G151S和G151C。 (注:access这个词在原文语境下不太明确准确意思,可能存在理解偏差,暂保留原文英文)

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8ff3/205489/bfc24cb9a374/jbacter00029-0125-a.jpg

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