Lee J S, Jeong Y W, Kim S T
LG Electronics Research Center, Seoul, South Korea.
Microsc Res Tech. 1996 Apr 15;33(6):490-5. doi: 10.1002/(SICI)1097-0029(19960415)33:6<490::AID-JEMT3>3.0.CO;2-P.
The rocking-angle ion-milling technique has been employed to produce optimum Pt/Ti/SiO2/Si, W/TiN/SiO2/Si, and (Pb,La)TiO3/Pt/MgO samples for cross-sectional transmission electron microscopy (TEM). Because of the different ion-milling rates between film layers and substrate materials, no satisfactory cross-sectional TEM samples could be obtained when they were made by the conventional ion-milling method. The differential thinning problems could be effectively solved by optimizing both ion-milling rocking-angle and ion-beam incidence angle without the increase of overall milling time. It was found that the rocking-angle of around 40 degrees is good when the multilayer structure is composed of materials with great ion-milling rate differences, while the rocking angle of around 80 degrees is good when the ion-milling rate differences are relatively small.
采用摇摆角离子研磨技术制备用于横截面透射电子显微镜（TEM）分析的最佳Pt/Ti/SiO2/Si、W/TiN/SiO2/Si和(Pb,La)TiO3/Pt/MgO样品。由于薄膜层与衬底材料之间的离子研磨速率不同，采用传统离子研磨方法制备时，无法获得令人满意的横截面TEM样品。通过优化离子研磨摇摆角和离子束入射角，在不增加整体研磨时间的情况下，可有效解决差异减薄问题。研究发现，当多层结构由离子研磨速率差异较大的材料组成时，约40度的摇摆角效果较好；而当离子研磨速率差异相对较小时，约80度的摇摆角效果较好。
