Induction of mutations by chemicals and gamma rays in mutants of yeast refractory to UV-mutagenesis.

Radiation-sensitive mutants of Schizosaccharomyces pombe, known to be refractory to UV-mutagenesis, were tested for mutability caused by treatments with chemicals and gamma rays. One such mutant (rad3) was studied over a wide range of UV doses to compare the kinetics of its mutational response to that of the wild type. All such comparisons were carried out using a forward mutation system. Data show that, unlike UV, the chemical mutagens as well as gamma rays produced mutations (although at reduced frequency), in the strains of S. pombe tested, indicating the existence of an additional mechanism(s) for chemical and gamma ray induced mutations. These observations are discussed as these relate to the pathways for repair of mutational damage in yeast.