Fafard S, Hinzer K, Raymond S, Dion M, McCaffrey J, Feng Y, Charbonneau S
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6.
Science. 1996 Nov 22;274(5291):1350-3. doi: 10.1126/science.274.5291.1350.
Visible-stimulated emission in a semiconductor quantum dot (QD) laser structure has been demonstrated. Red-emitting, self-assembled QDs of highly strained InAlAs have been grown by molecular beam epitaxy on a GaAs substrate. Carriers injected electrically from the doped regions of a separate confinement heterostructure thermalized efficiently into the zero-dimensional QD states, and stimulated emission at approximately 707 nanometers was observed at 77 kelvin with a threshold current of 175 milliamperes for a 60-micrometer by 400-micrometer broad area laser. An external efficiency of approximately 8.5 percent at low temperature and a peak power greater than 200 milliwatts demonstrate the good size distribution and high gain in these high-quality QDs.
已证明在半导体量子点（QD）激光结构中存在可见受激发射。通过分子束外延在砷化镓衬底上生长了具有高度应变的铟铝砷自组装量子点，其发射红光。从单独限制异质结构的掺杂区域电注入的载流子有效地热化到零维量子点态，在77开尔文温度下，对于一个60微米×400微米的大面积激光器，观察到约707纳米处的受激发射，阈值电流为175毫安。低温下约8.5%的外部效率和大于200毫瓦的峰值功率表明这些高质量量子点具有良好的尺寸分布和高增益。
