Bennett E, Urcan M S, Tinkle S S, Koszowski A G, Levinson S R
Department of Physiology, University of Colorado Health Sciences Center, Denver 80262, USA.
J Gen Physiol. 1997 Mar;109(3):327-43. doi: 10.1085/jgp.109.3.327.
A potential role for sialic acid in the voltage-dependent gating of rat skeletal muscle sodium channels (rSkM1) was investigated using Chinese hamster ovary (CHO) cells stably transfected with rSkM1. Changes in the voltage dependence of channel gating were observed after enzymatic (neuraminidase) removal of sialic acid from cells expressing rSkM1 and through the expression of rSkM1 in a sialylation-deficient cell line (lec2). The steady-state half-activation voltages (Va) of channels under each condition of reduced sialylation were approximately 10 mV more depolarized than control channels. The voltage dependence of the time constants of channel activation and inactivation were also shifted in the same direction and by a similar magnitude. In addition, recombinant deletion of likely glycosylation sites from the rSkM1 sequence resulted in mutant channels that gated at voltages up to 10mV more positive than wild-type channels. Thus three independent means of reducing channel sialylation show very similar effects on the voltage dependence of channel gating. Finally, steady-state activation voltages for channels subjected to reduced sialylation conditions were much less sensitive to the effects of external calcium than those measured under control conditions, indicating that sialic acid directly contributes to the negative surface potential. These results are consistent with an electrostatic mechanism by which external, negatively charged sialic acid residues on rSkM1 alter the electric field sensed by channel gating elements.
利用稳定转染了大鼠骨骼肌钠通道(rSkM1)的中国仓鼠卵巢(CHO)细胞,研究了唾液酸在大鼠骨骼肌钠通道(rSkM1)电压依赖性门控中的潜在作用。在对表达rSkM1的细胞进行酶促(神经氨酸酶)去除唾液酸后,以及通过在唾液酸化缺陷细胞系(lec2)中表达rSkM1,观察到通道门控电压依赖性的变化。在每种唾液酸化减少的条件下,通道的稳态半激活电压(Va)比对照通道大约去极化10 mV。通道激活和失活时间常数的电压依赖性也向相同方向移动且幅度相似。此外,从rSkM1序列中重组删除可能的糖基化位点,产生了突变通道,其门控电压比野生型通道正10 mV以上。因此,三种独立的降低通道唾液酸化的方法对通道门控电压依赖性显示出非常相似的影响。最后,处于唾液酸化减少条件下的通道的稳态激活电压对外部钙的影响比在对照条件下测量的电压更不敏感,表明唾液酸直接有助于负表面电位。这些结果与一种静电机制一致,即rSkM1上外部带负电荷的唾液酸残基改变通道门控元件感知的电场。