Isokawa M
Brain Research Institute, University of California Los Angeles 90024-1761, USA.
Brain Res Brain Res Protoc. 1997 May;1(2):114-6. doi: 10.1016/s1385-299x(96)00016-5.
Changes in neuronal surface area may be monitored by measuring the plasma membrane capacitance [8]. Membrane time constant (tao m) is given by the product of the membrane resistance (rm) and membrane capacitance (Cm), tao m = rm Cm. Thus, when membrane resistance is kept constant at a steady state (resting), membrane time constant can reflect the size of neuronal surface area. Membrane time constant is the time for the potential to fall from the resting to a fraction (1-l/e), or 63%, of its final value in the charging curve during the application of a small negative current pulse. Negative voltage shift from the resting potential hardly activates any voltage-dependent ion channel, resulting in nominal changes in cell membrane resistance. Although elaborated methods for mathematical models and simulations are available for the electrophysiological assessment of neuron geometry in order to estimate subthreshold potential attenuation during the propagation of synaptically mediated electrical signals, they involve a number of critical assumptions for the convenience to each model, and some of these assumptions are unlikely to be valid. With these restrictive assumptions, very little can be determined about the electronic structure of a neuron beyond the measurement of neuronal membrane resistance and membrane time constant. Alternatively, numerous tracers are available to visualize morphologies of neurons intracellularly and extracellularly. These anatomical methods provide direct and quantitative evidence for neuron geometry; however, they involve tissue processing and a series of chemical reactions, some of which are time- and effort-demanding. The purpose of the present paper is to show that membrane time constant can be effectively used as a tool to assess diminution in cell surface area without involving extensive mathematical theories and/or neuroanatomical techniques. This approach is particularly effective in electrotonically compact cells such as hippocampal neurons. Recent development in the technique of the whole-cell patch clamp recording in the slice preparation yielded longer time constant with better resolution due to the absence of the leak conductance associated with microelectrode impalement. Indeed, when membrane time constant was measured with the whole-cell patch clamp recording technique, it successfully detected the reduction in dendritic arbors (dendritic degeneration) in dentate granule cells in the pilocarpine model of chronic epilepsy, and this finding is supported by the neuroanatomical evidence that was obtained from the same specimen samples. Membrane time constant is an easy-to-measure "passive membrane property" and can be used as a reliable probe by itself for detecting dendritic degeneration or as a tool for decision-making in introducing neuroanatomical technique in combination with slice neurophysiology.
神经元表面积的变化可通过测量质膜电容来监测[8]。膜时间常数(τm)由膜电阻(rm)与膜电容(Cm)的乘积给出,即τm = rm Cm。因此,当膜电阻在稳态(静息)时保持恒定时,膜时间常数可以反映神经元表面积的大小。膜时间常数是在施加小的负电流脉冲期间,电位从静息值下降到充电曲线中其最终值的分数(1 - 1/e)或63%所需的时间。从静息电位的负电压偏移几乎不会激活任何电压依赖性离子通道,导致细胞膜电阻的变化可以忽略不计。尽管有详细的数学模型和模拟方法可用于神经元几何结构的电生理评估,以估计突触介导的电信号传播过程中的阈下电位衰减,但为了方便每个模型,它们涉及许多关键假设,其中一些假设不太可能成立。基于这些限制性假设,除了测量神经元膜电阻和膜时间常数之外,关于神经元的电子结构几乎无法确定。另外,有许多示踪剂可用于在细胞内和细胞外可视化神经元的形态。这些解剖学方法为神经元几何结构提供了直接和定量的证据;然而,它们涉及组织处理和一系列化学反应,其中一些反应既耗时又费力。本文的目的是表明,膜时间常数可以有效地用作评估细胞表面积减小的工具,而无需涉及广泛的数学理论和/或神经解剖学技术。这种方法在电紧张性紧密的细胞如海马神经元中特别有效。切片制备中全细胞膜片钳记录技术的最新发展由于不存在与微电极刺入相关的泄漏电导,从而产生了具有更好分辨率的更长时间常数。实际上,当用全细胞膜片钳记录技术测量膜时间常数时,可以成功检测到慢性癫痫匹鲁卡品模型中齿状颗粒细胞树突分支的减少(树突退变),并且这一发现得到了从相同标本样本获得的神经解剖学证据的支持。膜时间常数是一种易于测量的“被动膜特性”,其本身可作为检测树突退变的可靠探针,或作为结合切片神经生理学引入神经解剖学技术时的决策工具。