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不完全定向附着:无缺陷纳米晶体中的位错生成

Imperfect oriented attachment: dislocation generation in defect-free nanocrystals.

作者信息

Penn RL, Banfield JF

机构信息

R. L. Penn, Materials Science Program, University of Wisconsin-Madison, Madison, WI 53706, USA. J. F. Banfield, Mineralogical Institute, Graduate School of Science, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan. E-m.

出版信息

Science. 1998 Aug 14;281(5379):969-71. doi: 10.1126/science.281.5379.969.

Abstract

Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.

摘要

位错是固体中常见的缺陷,但所有晶体最初都是无位错的晶核。人们对晶体早期生长过程中位错形成的机制了解甚少。当纳米晶体材料通过在特定晶体学表面上的取向附生生长,且界面处存在小的取向差时,就会产生位错。在两个或更多紧密间隔的螺旋位错处的螺旋生长提供了一种产生复杂多型和多晶结构的机制。这些结果对于理解晶体生长具有至关重要的意义。

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