Islas L D, Sigworth F J
Department of Cellular and Molecular Physiology, Yale University School of Medicine, New Haven, Connecticut 06520, USA.
J Gen Physiol. 2001 Jan;117(1):69-89. doi: 10.1085/jgp.117.1.69.
Various experiments have suggested that the S4 segment in voltage-dependent Na(+) and K(+) channels is in contact with a solvent-accessible cavity. We explore the consequences of the existence of such a cavity through the electrostatic effects on the gating currents of Shaker K(+) channels under conditions of reduced ionic strength S. We observe that approximately 10-fold reductions of intracellular S produce reductions of the measured gating charge of approximately 10%. These effects continue at even lower values of S. The reduction of gating charge when S is reduced by 10-fold at the extracellular surface is much smaller (approximately 2%). Shifts of the Q(V) curve because of a reduced S are small (<10 mV in size), which is consistent with very little fixed surface charge. Continuum electrostatic calculations show that the S effects on gating charge can be explained by the alteration of the local potential in an intracellular conical cavity of 20-24-A depth and 12-A aperture, and a smaller extracellular cavity of 3-A depth and the same aperture. In this case, the attenuation of the membrane potential at low S leads to reduction of the apparent gating charge. We suggest that this cavity is made by a bundle of transmembrane helices, and that the gating charge movement occurs by translocation of charged residues across a thin septum of approximately 3-7 A thickness.
各种实验表明,电压依赖性钠通道和钾通道中的S4片段与一个溶剂可及腔相接触。我们通过在离子强度S降低的条件下对Shaker钾通道门控电流的静电效应,探讨了这种腔存在的后果。我们观察到,细胞内S降低约10倍会导致测得的门控电荷减少约10%。在更低的S值下,这些效应仍然存在。当细胞外表面的S降低10倍时,门控电荷的减少要小得多(约2%)。由于S降低导致的Q(V)曲线的偏移很小(大小<10 mV),这与固定表面电荷很少是一致的。连续静电计算表明,S对门控电荷的影响可以通过一个深度为20 - 24 Å、孔径为12 Å的细胞内锥形腔以及一个深度为3 Å、孔径相同的较小细胞外腔中局部电位的改变来解释。在这种情况下,低S时膜电位的衰减导致表观门控电荷减少。我们认为这个腔是由一束跨膜螺旋形成的,并且门控电荷的移动是通过带电残基跨一个厚度约为3 - 7 Å的薄隔膜的易位而发生的。