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瓦隆纳耳石膜的电击穿机制。

The mechanism of electrical breakdown in the membranes of Valonai utricularis.

作者信息

Coster H G, Simmermann U

出版信息

J Membr Biol. 1975 Jun 3;22(1):73-90. doi: 10.1007/BF01868164.

Abstract

The dielectric breakdown in the membranes of cells of Valonia utricularis was investigated using intracellular electrodes and 500 mu sec current pulses. Electrical breakdown, which occurs when the membrane potential reaches a well-defined critical value, is not associated with global damage to the cell or its membranes (the membrane reseals in smaller than 5 sec). It was thus possible to investigate the effect of temperature on dielectric breakdown in single cells. It was found that the critical potential for breakdown was strongly dependent on temperature, decreasing from similar to 100 mV at 4 degrees C to similar to 640 mV at 30 degrees C. The decrease in the breakdown potential with increasing temperature and the very short rise-time of the breakdown current (similar to 1mu sec) suggests that the Wien field dissociation does not play a major role in the breakdown process. It is shown that the nonlinear I-V characteristics observed at different temperatures can be accurately accounted for with no adjustable parameters, by considerations of the mechanical compression of the membrane due to stresses induced by the electric field. Electrical breakdown on this scheme results from an electromechanical instability in the membrane. On this basis the present results indicate that the elastic modulus of the region of the membrane where breakdown occurs, decreases by a factor of 2 with increasing temperature from 4 to 30 degrees C. On the assumption of a thickness of 4.0 nm and a dielectric constant of 5, the elastic modulus is estimated to have a value of 5 times 10-6Nm- minus 2 at 20 degrees C.

摘要

利用细胞内电极和500微秒的电流脉冲,对袋礁膜藻细胞的膜介电击穿进行了研究。当膜电位达到一个明确的临界值时发生的电击穿,与细胞或其膜的整体损伤无关(膜在小于5秒内重新封闭)。因此,有可能研究温度对单细胞介电击穿的影响。发现击穿的临界电位强烈依赖于温度,从4℃时的约100 mV降至30℃时的约640 mV。击穿电位随温度升高而降低以及击穿电流的上升时间非常短(约1微秒),这表明维恩场离解在击穿过程中不起主要作用。结果表明,考虑到电场引起的应力导致的膜的机械压缩,在不进行可调参数的情况下,可以准确地解释在不同温度下观察到的非线性I-V特性。基于此方案的电击穿是由膜中的机电不稳定性引起的。在此基础上,目前的结果表明,发生击穿的膜区域的弹性模量在温度从4℃升高到30℃时降低了2倍。假设厚度为4.0 nm,介电常数为5,则估计在20℃时弹性模量的值为5×10⁻⁶ N/m²。

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