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神经元对弱电场的敏感性。

Sensitivity of neurons to weak electric fields.

作者信息

Francis Joseph T, Gluckman Bruce J, Schiff Steven J

机构信息

Krasnow Institute for Advanced Studies, George Mason University, Fairfax, Virginia 22030, USA.

出版信息

J Neurosci. 2003 Aug 13;23(19):7255-61. doi: 10.1523/JNEUROSCI.23-19-07255.2003.

Abstract

Weak electric fields modulate neuronal activity, and knowledge of the interaction threshold is important in the understanding of neuronal synchronization, in neural prosthetic design, and in the public health assessment of environmental extremely low frequency fields. Previous experimental measurements have placed the threshold between 1 and 5 mV/mm, although theory predicts that elongated neurons should have submillivolt per millimeter sensitivity near 100 microV/mm. We here provide the first experimental confirmation that neuronal networks are detectably sensitive to submillivolt per millimeter electrical fields [Gaussian pulses 26 msec full width at half-maximal, 140 microV/mm root mean square (rms), 295 microV/mm peak amplitude], an order of magnitude below previous findings, and further demonstrate that these networks are more sensitive than the average single neuron threshold (185 microV/mm rms, 394 microV/mm peak amplitude) to field modulation.

摘要

弱电场可调节神经元活动,了解相互作用阈值对于理解神经元同步、神经假体设计以及环境极低频场的公共卫生评估至关重要。先前的实验测量将阈值设定在1至5 mV/mm之间,尽管理论预测细长神经元在接近100 μV/mm时应具有每毫米亚毫伏的灵敏度。我们在此首次通过实验证实,神经元网络对每毫米亚毫伏电场[半高全宽26毫秒的高斯脉冲,均方根(rms)为140 μV/mm,峰值幅度为295 μV/mm]具有可检测到的敏感性,比先前的发现低一个数量级,并进一步证明这些网络比平均单个神经元阈值(rms为185 μV/mm,峰值幅度为394 μV/mm)对场调制更敏感。

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