Chen Zhihong, Appenzeller Joerg, Knoch Joachim, Lin Yu-ming, Avouris Phaedon
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Nano Lett. 2005 Jul;5(7):1497-502. doi: 10.1021/nl0508624.
Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling barrier whose height is determined by the nanotube diameter and the nature of the source/drain metal contacts. Our study permits identification of the desired combination of tube diameter and type of metal that provides the optimum performance of a CNFET.
单壁碳纳米管场效应晶体管（CNFET）已被证明表现为肖特基势垒（SB）器件。然而，尚不清楚哪些因素控制着SB的大小。在此，我们给出了对该问题的首次统计分析。我们表明，一个包含100多个器件的大数据集可以由一个模型统一解释，该模型将CNFET的导通电流与一个隧穿势垒相关联，该势垒的高度由纳米管直径和源极/漏极金属接触的性质决定。我们的研究允许确定能提供CNFET最佳性能的管径和金属类型的理想组合。
