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由可调静态电场控制的两个横向隧道耦合(In,Ga)As/GaAs量子点的量子发光。

Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field.

作者信息

Beirne G J, Hermannstädter C, Wang L, Rastelli A, Schmidt O G, Michler P

机构信息

5. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany.

出版信息

Phys Rev Lett. 2006 Apr 7;96(13):137401. doi: 10.1103/PhysRevLett.96.137401. Epub 2006 Apr 4.

DOI:10.1103/PhysRevLett.96.137401
PMID:16712031
Abstract

Lateral quantum coupling between two self-assembled (In,Ga)As quantum dots has been observed. Photon statistics measurements between the various excitonic and biexcitonic transitions of these lateral quantum dot molecules display strong antibunching confirming the presence of coupling. Furthermore, we observe an anomalous exciton Stark shift with respect to static electric field. A simple model indicates that the lateral coupling is due to electron tunneling between the dots when the ground states are in resonance. The electron probability can then be shifted to either dot and the system can be used to create a wavelength-tunable single-photon emitter by simply applying a voltage.

摘要

已观察到两个自组装(铟,镓)砷量子点之间的横向量子耦合。对这些横向量子点分子的各种激子和双激子跃迁进行的光子统计测量显示出强烈的反聚束现象,证实了耦合的存在。此外,我们观察到相对于静电场存在异常的激子斯塔克位移。一个简单的模型表明,当基态共振时,横向耦合是由于量子点之间的电子隧穿。然后电子概率可以转移到任何一个量子点,并且通过简单地施加电压,该系统可用于创建一个波长可调谐的单光子发射器。

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