Dattoli Eric N, Wan Qing, Guo Wei, Chen Yanbin, Pan Xiaoqing, Lu Wei
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
Nano Lett. 2007 Aug;7(8):2463-9. doi: 10.1021/nl0712217. Epub 2007 Jun 27.
We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performance in terms of transconductance, bias voltage range, and on/off ratio. High on-currents and field-effect mobilities were obtained from the NW-TFT devices even at low nanowire coverage. The SnO2 nanowire-based TFT approach offers a number of desirable properties such as low growth cost, high electron mobility, and optical transparency and low operation voltage, and may lead to large-scale applications of transparent electronics on diverse substrates.
我们报告了基于轻度钽掺杂二氧化锡纳米线的场效应晶体管（FET）和透明薄膜晶体管（TFT）器件的研究。基于纳米线的器件表现出均匀的特性，平均场效应迁移率超过100 cm2/V·s。玻璃基板上基于纳米线的原型薄膜晶体管（NW-TFT）器件在跨导、偏置电压范围和开/关比方面表现出优异的光学透明度和晶体管性能。即使在低纳米线覆盖率下，NW-TFT器件也能获得高导通电流和场效应迁移率。基于二氧化锡纳米线的TFT方法具有许多理想的特性，如低生长成本、高电子迁移率、光学透明度和低工作电压，并且可能导致透明电子器件在各种基板上的大规模应用。
