Dahiya A S, Sporea R A, Poulin-Vittrant G, Alquier D
GREMAN UMR 7347, CNRS, Université de Tours, INSA-CVL, 16 rue Pierre et Marie Curie, 37071, Tours, France.
Advanced Technology Institute, Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
Sci Rep. 2019 Feb 27;9(1):2979. doi: 10.1038/s41598-019-39833-8.
Semiconducting nanostructures are one of the potential candidates to accomplish low-temperature and solution-based device assembly processes for the fabrication of transistors that offer practical solutions toward realizing low-cost flexible electronics. Meanwhile, it has been shown that by introducing a contact barrier, in a specific transistor configuration, stable device operation can be achieved at much reduced power consumption. In this work, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for high performance and stable nano-transistors on conventional Si/SiO substrates. We have fabricated two variant of transistors based on nanoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transistors (SGTs). Stability tests are performed on both devices with respect to gate bias stress at three different regimes of transistor operation, namely off-state, on-state and sub-threshold state. While in the off-state, FETs shows comparatively better stability than SGTs devices, in both sub-threshold and on-state regimes of transistors, SGTs clearly exhibits better robustness against bias stress variability. The present investigation experimentally demonstrates the potential advantages of SGTs over FETs as driver transistor for AMOLEDs display circuits which require very high stability in OLED driving current.
半导体纳米结构是实现用于制造晶体管的低温且基于溶液的器件组装工艺的潜在候选材料之一，这些晶体管为实现低成本柔性电子产品提供了切实可行的解决方案。同时，研究表明，通过引入接触势垒，在特定的晶体管配置中，可以在大幅降低功耗的情况下实现稳定的器件运行。在这项工作中，我们研究了一维氧化锌纳米线（NWs）和二维纳米片（NSs），以在传统的Si/SiO衬底上制造高性能且稳定的纳米晶体管。我们基于纳米级单晶氧化物材料制造了两种变体晶体管：场效应晶体管（FETs）和源极栅控晶体管（SGTs）。在晶体管工作的三种不同状态，即关态、开态和亚阈值状态下，对这两种器件进行了关于栅极偏置应力的稳定性测试。在关态时，FETs表现出比SGTs器件相对更好的稳定性，而在晶体管的亚阈值和开态状态下，SGTs明显表现出对偏置应力变化具有更好的鲁棒性。本研究通过实验证明了SGTs相对于FETs作为用于AMOLED显示电路的驱动晶体管的潜在优势，AMOLED显示电路在OLED驱动电流方面需要非常高的稳定性。
