Jiang Yuwen, Huang Shufan, Zhu Zhichao, Zeng Cheng, Fan Yongliang, Jiang Zuimin
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education), Collaborative Innovative Center of Advanced Microstructures, Department of Physics, Fudan University, Shanghai, 200433, Peoples' Republic of China.
Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, Peoples' Republic of China.
Nanoscale Res Lett. 2016 Dec;11(1):102. doi: 10.1186/s11671-016-1312-1. Epub 2016 Feb 24.
Large-area ordered GeSi multi-quantum-well nanopillar array (MQW-NPA) samples with different nanopillar lateral sizes (270, 120, and 70 nm) are fabricated by a cost-effective and scalable dry-etching process in combination with nanosphere lithography technique. A significant enhancement in photoluminescence (PL) intensity has been observed in the GeSi MQW-NPA samples compared with the as-grown GeSi MQW one. Nanopillar samples with different lateral sizes show different enhancements in PL intensity. The enhancements are analyzed quantitatively and attributed to three factors. One is the antireflection of the nanopillar structures. Another is an enhanced extraction in nanopillar arrays at the emission wavelength. Thirdly, the GeSi quantum wells in close proximity to the substrates would have more contribution to the PL than before etching. Our results show that all the three factors should be taken into account in designing and fabricating surface microstructures of GeSi MQW materials in order to improve their optical properties.
通过具有成本效益且可扩展的干法蚀刻工艺结合纳米球光刻技术，制备了具有不同纳米柱横向尺寸（270、120和70纳米）的大面积有序锗硅多量子阱纳米柱阵列（MQW-NPA）样品。与生长态的锗硅多量子阱样品相比，在锗硅MQW-NPA样品中观察到光致发光（PL）强度有显著增强。具有不同横向尺寸的纳米柱样品在PL强度上表现出不同程度的增强。对这些增强进行了定量分析，并归因于三个因素。一是纳米柱结构的抗反射作用。另一个是在发射波长处纳米柱阵列中增强的光提取。第三，靠近衬底的锗硅量子阱对PL的贡献比蚀刻前更大。我们的结果表明，在设计和制造锗硅MQW材料的表面微结构以改善其光学性能时，应考虑所有这三个因素。
