Institute Center for Future Energy Systems-iFES, Masdar Institute of Science and Technology, PO BOX 54224 Abu Dhabi, UAE.
Sci Rep. 2013;3:2099. doi: 10.1038/srep02099.
Achieving quantum dot self-assembly at precise pre-defined locations is of vital interest. In this work, a novel physical method for producing germanium quantum dots on silicon using nanoindentation to pre-define nucleation sites is described. Self-assembly of ordered ~10 nm height germanium quantum dot arrays on silicon substrates is achieved. Due to the inherent simplicity and elegance of the proposed method, the results describe an attractive technique to manufacture semiconductor quantum dot structures for future quantum electronic and photonic applications.
实现量子点在精确预定义位置的自组装是至关重要的。在这项工作中，描述了一种使用纳米压痕在硅上预先定义成核位置来生成锗量子点的新颖物理方法。在硅衬底上实现了有序的~10nm 高度锗量子点阵列的自组装。由于所提出的方法具有固有的简单性和优雅性，因此研究结果描述了一种有吸引力的技术，可以制造用于未来量子电子和光子应用的半导体量子点结构。
