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植入大脑的有源三维微电极阵列的热影响。

Thermal impact of an active 3-D microelectrode array implanted in the brain.

作者信息

Kim Sohee, Tathireddy Prashant, Normann Richard A, Solzbacher Florian

机构信息

Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.

出版信息

IEEE Trans Neural Syst Rehabil Eng. 2007 Dec;15(4):493-501. doi: 10.1109/TNSRE.2007.908429.

Abstract

A chronically implantable, wireless neural interface device will require integrating electronic circuitry with the interfacing microelectrodes in order to eliminate wired connections. Since the integrated circuit (IC) dissipates a certain amount of power, it will raise the temperature in surrounding tissues where it is implanted. In this paper, the thermal influence of the integrated 3-D Utah electrode array (UEA) device implanted in the brain was investigated by numerical simulation using finite element analysis (FEA) and by experimental measurement in vitro as well as in vivo. The numerically calculated and experimentally measured temperature increases due to the UEA implantation were in good agreement. The experimentally validated numerical model predicted that the temperature increases linearly with power dissipation through the UEA, with a slope of 0.029 degree C/mW over the power dissipation levels expected to be used. The influences of blood perfusion, brain metabolism, and UEA geometry on tissue heating were also investigated using the numerical model.

摘要

一种可长期植入的无线神经接口设备需要将电子电路与接口微电极集成在一起,以消除有线连接。由于集成电路(IC)会消耗一定量的功率,它会使植入部位周围组织的温度升高。本文通过有限元分析(FEA)数值模拟以及体外和体内实验测量,研究了植入大脑的集成三维犹他电极阵列(UEA)设备的热影响。UEA植入导致的数值计算和实验测量的温度升高结果吻合良好。经实验验证的数值模型预测,温度随通过UEA的功耗呈线性增加,在预期使用的功耗水平上斜率为0.029℃/mW。还使用该数值模型研究了血液灌注、脑代谢和UEA几何形状对组织加热的影响。

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