Dey S K, Budd K D, Payne D A
Dept. of Ceramic Eng., Illinois Univ., Urbana, IL.
IEEE Trans Ultrason Ferroelectr Freq Control. 1988;35(1):80-1. doi: 10.1109/58.4153.
The ferroelectric effect has been demonstrated for sol-gel derived lead zirconate titanate (PZT) (53/47) thin films. The respective values of coercive field and remanent polarization were 4x10(6) V/m and 0.36 C/m(2). The thin-film fabrication process is simple and compatible with Si planar technology, and offers a wide variety of potential uses for counting, memory, and integrated optical circuit applications.
已证实溶胶-凝胶法制备的锆钛酸铅（PZT）（53/47）薄膜具有铁电效应。其矫顽场和剩余极化的相应值分别为4×10⁶ V/m和0.36 C/m²。该薄膜制造工艺简单，与硅平面技术兼容，并且在计数、存储和集成光学电路应用方面有多种潜在用途。
