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纳米通道中的动电现象:第一部分。电双层重叠与通道-阱平衡。

Electrokinetics in nanochannels: part I. Electric double layer overlap and channel-to-well equilibrium.

作者信息

Baldessari Fabio, Santiago Juan G

机构信息

Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, USA.

出版信息

J Colloid Interface Sci. 2008 Sep 15;325(2):526-38. doi: 10.1016/j.jcis.2008.06.007. Epub 2008 Jul 18.

Abstract

In this paper a new model is described for calculating the electric potential field in a long, thin nanochannel with overlapped electric double layers. Electrolyte concentration in the nanochannel is predicted self-consistently via equilibrium between ionic solution in the wells and within the nanochannel. Differently than published models that require detailed iterative numerical solutions of coupled differential equations, the framework presented here is self-consistent and predictions are obtained solving a simple one-dimensional integral. The derivation clearly shows that the electric potential field depends on three new parameters: the ratio of ion density in the channel to ion density in the wells; the ratio of free-charge density to bulk ion density within the channel; and a modified Debye-Hückel thickness, which is the relevant scale for shielding of surface net charge. For completeness, three wall-surface boundary conditions are analyzed: specified zeta-potential; specified surface net charge density; and charge regulation. Predictions of experimentally observable quantities based on the model proposed here, such as depth-averaged electroosmotic flow and net ionic current, are significantly different than results from previous overlapped electric double layer models. In this first paper of a series of two, predictions are presented where channel depth is varied at constant well concentration. Results show that under conditions of electric double layer overlap, electroosmosis contributes only a small fraction of the net ionic current, and that most of the measurable current is due to ionic conduction in conditions of increased counterion density in the nanochannel. In the second of this two-paper series, predictions are presented where well-concentration is varied and the channel depth is held constant, and the model described here is employed to study the dependence of ion mobility on ionic strength, and compare predictions to measurements of ionic current as a function of channel depth and ion density.

摘要

本文描述了一种用于计算具有重叠双电层的长而细的纳米通道中电势场的新模型。通过阱内和纳米通道内离子溶液之间的平衡,自洽地预测纳米通道中的电解质浓度。与需要耦合微分方程的详细迭代数值解的已发表模型不同,这里提出的框架是自洽的,并且通过求解一个简单的一维积分来获得预测结果。推导清楚地表明,电势场取决于三个新参数:通道中离子密度与阱中离子密度的比值;通道内自由电荷密度与本体离子密度的比值;以及修正的德拜 - 休克尔厚度,它是屏蔽表面净电荷的相关尺度。为了完整起见,分析了三种壁面边界条件:指定的zeta电位;指定的表面净电荷密度;以及电荷调节。基于本文提出的模型对实验可观测数量的预测,如深度平均电渗流和净离子电流,与先前重叠双电层模型的结果有显著差异。在这两篇系列论文的第一篇中,给出了在阱浓度恒定的情况下通道深度变化时的预测结果。结果表明,在双电层重叠的条件下,电渗仅占净离子电流的一小部分,并且大部分可测量电流是由于纳米通道中反离子密度增加时的离子传导引起的。在这两篇系列论文的第二篇中,给出了阱浓度变化而通道深度保持恒定的预测结果,并利用这里描述的模型研究离子迁移率对离子强度的依赖性,并将预测结果与作为通道深度和离子密度函数的离子电流测量值进行比较。

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