Ezhil Raj A Moses, Selvan G, Ravidhas C, Jayachandran M, Sanjeeviraja C
Department of Physics, Scott Christian College (Autonomous), Nagercoil 629 003, India.
J Colloid Interface Sci. 2008 Dec 15;328(2):396-401. doi: 10.1016/j.jcis.2008.08.052. Epub 2008 Oct 9.
MgIn(2)O(4), which has an inverse spinel structure, has been adopted as the transparent material in optoelectronic device fabrication due to its high optical transparency and electrical conductivity. Such a technologically important material was prepared by the spray pyrolysis technique. Precursors prepared for the cationic ratio Mg/In=0.5 were thermally sprayed onto glass substrates at 400 and 450 degrees C. We report herein the preparation and characterization of the films by X-ray diffraction (XRD), energy-dispersive absorption X-ray spectroscopy (EDAX), and atomic force microscopy (AFM). The XRD results showed the single phase formation of the material that revealed the presence of Mg(2+) and In(3+) in the inverse spinel-related structure. The FTIR and EDAX results further confirmed that the nanocrystalline films were mainly composed of magnesium, indium, and oxygen, in agreement with XRD analysis. We surmised from the AFM micrographs that the atoms have enough diffusion activation energy to occupy the correct site in the crystal lattice. For the 423-nm-thick magnesium indium oxide films grown at 400 degrees C, the electrical conductivity was 5.63x10(-6) Scm(-1) and the average optical transmittance was 63% in the visible range (400-700 nm). Similar MgIn(2)O(4) films deposited at 450 degrees C have a conductivity value of 1.5x10(-5) Scm(-1) and an average transmittance of 75%. Hall coefficient observations showed n-type electrical conductivity and high electron carrier concentration of 2.7x10(19) cm(-3).
具有反尖晶石结构的MgIn₂O₄，因其高光学透明度和导电性，已被用作光电器件制造中的透明材料。这种具有重要技术意义的材料是通过喷雾热解技术制备的。将阳离子比Mg/In = 0.5的前驱体在400℃和450℃下热喷涂到玻璃基板上。我们在此报告通过X射线衍射（XRD）、能量色散吸收X射线光谱（EDAX）和原子力显微镜（AFM）对薄膜进行的制备和表征。XRD结果表明材料形成了单相，揭示了在反尖晶石相关结构中存在Mg²⁺和In³⁺。FTIR和EDAX结果进一步证实，纳米晶薄膜主要由镁、铟和氧组成，这与XRD分析一致。我们从AFM显微照片推测，原子具有足够的扩散活化能以占据晶格中的正确位置。对于在400℃下生长的423纳米厚的镁铟氧化物薄膜，其电导率为5.63×10⁻⁶ S cm⁻¹，在可见光范围（400 - 700纳米）内的平均光学透过率为63%。在450℃下沉积的类似MgIn₂O₄薄膜的电导率值为1.5×10⁻⁵ S cm⁻¹，平均透过率为75%。霍尔系数观测表明其为n型导电性，电子载流子浓度高达2.7×10¹⁹ cm⁻³。
