Yeung Chi K, Shek Samantha Y, Yu Carol S, Kono Taro, Chan Henry H
Division of Dermatology, Department of Medicine, University of Hong Kong, Hong Kong.
Dermatol Surg. 2009 Apr;35(4):593-600. doi: 10.1111/j.1524-4725.2009.01097.x. Epub 2009 Mar 20.
The 1,450-nm diode laser is effective for the treatment of inflammatory acne, but there is a significant risk of postinflammatory hyperpigmentation (PIH) in Asian skin.
To determine whether lower fluence and shorter cooling duration of the 1,450-nm diode laser improve acne effectively with minimal PIH in darker skin.
Twenty-six subjects (skin phototypes IV-V) with inflammatory facial acne received four treatments using the 1,450-nm diode laser with 6-mm spot size 3 to 4 weeks apart. We used three passes with a fluence of 8 J/cm(2) with dynamic cooling of 25 ms to minimize PIH. Serial blinded assessment of acne lesion counts and sebum measurement were evaluated before and up to 6 months after treatment.
Four weeks and 6 months after the last treatment, reduction of mean acne lesions was 29% (p<.01) and 40% (p<.03), respectively, from baseline in the group with moderate acne. Significant improvements of sebum production were noted. Four episodes of temporary PIH (3.8%) were observed out of all treatment sessions.
Use of multiple passes of a 1,450-nm diode laser with lower fluence and shorter dynamic cooling device retains its therapeutic efficacy with substantial reduction of PIH for moderate acne.
1450纳米二极管激光对炎性痤疮的治疗有效,但在亚洲人群皮肤中存在显著的炎症后色素沉着(PIH)风险。
确定较低能量密度和较短冷却时间的1450纳米二极管激光在较深肤色皮肤中能否以最小的PIH有效改善痤疮。
26名患有炎性面部痤疮的受试者(皮肤光类型IV - V)接受了4次使用光斑尺寸为6毫米的1450纳米二极管激光的治疗,每次治疗间隔3至4周。我们采用能量密度为8 J/cm²的三次照射,并动态冷却25毫秒,以尽量减少PIH。在治疗前及治疗后长达6个月的时间里,对痤疮皮损计数和皮脂测量进行系列盲法评估。
在中度痤疮组中,最后一次治疗后4周和6个月时,平均痤疮皮损分别较基线减少了29%(p <.01)和40%(p <.03)。皮脂分泌有显著改善。在所有治疗疗程中观察到4次短暂性PIH发作(3.8%)。
使用较低能量密度和较短动态冷却装置的1450纳米二极管激光多次照射,对中度痤疮保持其治疗效果,同时显著减少PIH。