Neale Steven L, Ohta Aaron T, Hsu Hsan-Yin, Valley Justin K, Jamshidi Arash, Wu Ming C
Department of Electrical Engineering and Computer Sciences, Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720,
Opt Express. 2009 Mar 30;17(7):5232-9. doi: 10.1364/oe.17.005231.
In this paper we present trap profile measurements for HeLa cells in Optoelectronic Tweezers (OET) based on a data projector. The data projector is used as a light source to illuminate amorphous Si creating virtual electrodes which are used to trap particles through dielectrophoresis. We show that although the trap stiffness is typically greater at the edges of the optical spot it is possible to create a trap with constant trap stiffness by reducing the trap's size until it is similar to the object being trapped. We have successfully created a trap for HeLa cells with a constant trap stiffness of 3 x 10(-6) Nm-1 (capable of moving the cell up to 50 microms-1) with a 12 microm diameter trap. We also calculate the depth of the potential well that the cell will experience due to the trap and find that it to be 1.6 x 10(-16)J (4 x 10(4) kBT).
在本文中,我们展示了基于数据投影仪的光镊(OET)对HeLa细胞的阱轮廓测量。数据投影仪用作光源来照射非晶硅,从而创建虚拟电极,这些虚拟电极通过介电泳用于捕获粒子。我们表明,尽管阱刚度通常在光斑边缘处更大,但通过减小阱的尺寸直至其与被捕获物体相似,就有可能创建一个具有恒定阱刚度的阱。我们已经成功地为HeLa细胞创建了一个直径为12微米的阱,其恒定阱刚度为3×10⁻⁶ Nm⁻¹(能够使细胞移动速度高达50微米每秒)。我们还计算了细胞由于该阱而将经历的势阱深度,发现其为1.6×10⁻¹⁶焦耳(4×10⁴ kBT)。