Li Linjie, Gattass Rafael R, Gershgoren Erez, Hwang Hana, Fourkas John T
Department of Chemistry and Biochemistry, University of Maryland, College Park, MD 20742, USA.
Science. 2009 May 15;324(5929):910-3. doi: 10.1126/science.1168996. Epub 2009 Apr 9.
In conventional photolithography, diffraction limits the resolution to about one-quarter of the wavelength of the light used. We introduce an approach to photolithography in which multiphoton absorption of pulsed 800-nanometer (nm) light is used to initiate cross-linking in a polymer photoresist and one-photon absorption of continuous-wave 800-nm light is used simultaneously to deactivate the photopolymerization. By employing spatial phase-shaping of the deactivation beam, we demonstrate the fabrication of features with scalable resolution along the beam axis, down to a 40-nm minimum feature size. We anticipate application of this technique for the fabrication of diverse two- and three-dimensional structures with a feature size that is a small fraction of the wavelength of the light employed.
在传统光刻技术中,衍射将分辨率限制在所用光波长的约四分之一左右。我们引入了一种光刻方法,其中利用脉冲800纳米(nm)光的多光子吸收在聚合物光刻胶中引发交联,并同时利用连续波800纳米光的单光子吸收使光聚合反应失活。通过对失活光束进行空间相位整形,我们展示了沿光束轴具有可扩展分辨率的特征制造,最小特征尺寸低至40纳米。我们预计该技术可用于制造各种二维和三维结构,其特征尺寸仅为所用光波长的一小部分。