Solid State Physics, Lund University, Box 118, 221 00 Lund, Sweden.
Nano Lett. 2010 Mar 10;10(3):809-12. doi: 10.1021/nl903125m.
In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.
在这封信中，我们报告了对垂直站立的 III-V 纳米线栅极 MOSFET（金属氧化物半导体场效应晶体管）的高频测量结果。纳米线晶体管由在半绝缘 InP 衬底上外延生长的 InAs 纳米线制成。MOSFET 的三个端子均由环绕接触定义。这使得对垂直 InAs MOSFET 进行高频测量成为可能。我们展示了对由 70 个栅长约为 100nm 的 InAs 纳米线 MOSFET 组成的矩阵进行的 S 参数测量结果。从这些测量中提取出的最高单位电流增益截止频率 f(t)为 7.4GHz，最高振荡频率 f(max)高于 20GHz。这表明，这是制造由垂直纳米线组成的高频集成电路的一种可行技术。
