Gonçalves Fábio, Zanetti Artemio Luiz, Zanetti Raquel Virgínia, Martelli Francesco Savério, Avila-Campos Mario Júlio, Tomazinho Luiz Fernando, Granjeiro José Mauro
Implantology Center, University City of Sao Paulo, Sao Paulo, Brazil.
Photomed Laser Surg. 2010 Apr;28(2):273-80. doi: 10.1089/pho.2009.2496.
To evaluate the potential of 980-nm gallium aluminum arsenide (GaAlAs) and 1064-nm neodymium-doped yttrium aluminum garnet (Nd:YAG) lasers to reduce bacteria after irradiation of implant surfaces contaminated with Enterococcus faecalis and Porphyromonas gingivalis and on irradiated implant surface morphology.
Despite the frequency of implant success, some implant loss is related to peri-implantitis because of difficulty in eliminating the biofilm.
Implants (3.75 x 13 mm) with machined surfaces, surfaces sand blasted with titanium oxide (TiO(2)), and sand-blasted and acid-etched surfaces were exposed to P. gingivalis and E. faecalis cultures and irradiated with 980-nm GaAlAs or 1064-nm Nd:YAG lasers. After laser treatments, the number of remaining colony-forming units and implant surface morphology were analyzed using scanning electron microscopy (SEM).
The Nd:YAG laser was able to promote a total contamination reduction on all implants irradiated. The results with the GaAlAs laser showed 100% bacteria reduction on the implants irradiated with 3 W. Irradiation with 2.5 W and 3 W achieved 100% of bacteria reduction on P. gingivalis-contaminated implants. Decontamination was not complete for the sand-blasted TiO(2) (78.6%) and acid-etched surfaces (49.4%) contaminated with E. faecalis and irradiated with 2.5 W. SEM showed no implant surface changes.
The wavelengths used in this research provided bacteria reduction without damaging implant surfaces. New clinical research should be encouraged for the use of this technology in the treatment of peri-implantitis.
评估980纳米砷化镓铝（GaAlAs）激光和1064纳米掺钕钇铝石榴石（Nd:YAG）激光对被粪肠球菌和牙龈卟啉单胞菌污染的种植体表面进行照射后减少细菌的潜力，以及对照射后种植体表面形态的影响。
尽管种植成功的频率较高，但由于难以消除生物膜，一些种植体的丢失与种植体周围炎有关。
将具有机械加工表面、经二氧化钛（TiO₂）喷砂处理的表面以及喷砂和酸蚀表面的种植体（3.75×13毫米）暴露于牙龈卟啉单胞菌和粪肠球菌培养物中，并用980纳米GaAlAs激光或1064纳米Nd:YAG激光进行照射。激光治疗后，使用扫描电子显微镜（SEM）分析剩余菌落形成单位的数量和种植体表面形态。
Nd:YAG激光能够使所有接受照射的种植体上的总体污染减少。GaAlAs激光的结果显示，用3瓦功率照射的种植体上细菌减少了100%。用2.5瓦和3瓦功率照射时，在被牙龈卟啉单胞菌污染的种植体上实现了100%的细菌减少。对于被粪肠球菌污染且用2.5瓦功率照射的喷砂TiO₂表面（78.6%）和酸蚀表面（49.4%），去污并不完全。SEM显示种植体表面没有变化。
本研究中使用的波长能够减少细菌，同时不会损坏种植体表面。应鼓励开展新的临床研究，以将该技术用于种植体周围炎的治疗。
