基于近乎完美对称 SWCNT 的 CMOS 器件及缩放技术。

Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

机构信息

Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, China.

出版信息

ACS Nano. 2009 Nov 24;3(11):3781-7. doi: 10.1021/nn901079p.

DOI:10.1021/nn901079p

PMID:19845337

Abstract

Symmetric n- and p-type field-effect transistors (FETs) have been fabricated on the same undoped single-walled carbon nanotube (SWCNT). The polarity of the FET is defined by controlled injection of electrons (n-type, via Sc electrodes) or holes (p-type, via Pd electrodes) into the SWCNT, instead of via chemically doping the SWCNT. The SWCNT-based FETs with different channel lengths show a clear trend of performance improvement for channel length scaling. Taking full advantage of the perfect symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter is demonstrated, which gives a voltage gain of over 160, and for the two adjacent n- and p-type FETs fabricated on the same SWCNT, high field mobility is realized simultaneously for electrons (3000 cm(2)/V.s) and holes (3300 cm(2)/V.s).

摘要

对称的 n 型和 p 型场效应晶体管（FET）已经在同一未掺杂的单壁碳纳米管（SWCNT）上制造出来。FET 的极性是通过控制向 SWCNT 中注入电子（n 型，通过 Sc 电极）或空穴（p 型，通过 Pd 电极）来定义的，而不是通过化学掺杂 SWCNT。具有不同沟道长度的基于 SWCNT 的 FET 显示出沟道长度缩放性能提高的明显趋势。充分利用半导体 SWCNT 完美的对称能带结构，展示了一个完美的基于 SWCNT 的 CMOS 反相器，其电压增益超过 160，并且对于在同一 SWCNT 上制造的两个相邻的 n 型和 p 型 FET，同时实现了电子（3000 cm(2)/V.s）和空穴（3300 cm(2)/V.s）的高场迁移率。