Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
Nat Commun. 2012 Feb 14;3:677. doi: 10.1038/ncomms1682.
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.
基于碳纳米管的场效应晶体管被证明比其硅 counterparts 更快、能耗更低。然而，要确保这些优势在集成电路中得以保持，这是一个挑战。在这里，我们展示了通过构建基于传输晶体管逻辑配置的碳纳米管集成电路，而不是互补金属氧化物半导体配置，可以显著减少场效应晶体管的使用。逻辑门通过一种无掺杂的方法构建在单个碳纳米管上，并且在低至 0.4 V 的单个电源电压下工作。传输晶体管逻辑配置为碳纳米管基电路设计提供了显著的简化、更高的潜在电路速度和显著降低的功耗。特别是，全加器总共需要 28 个场效应晶体管才能在常用的互补金属氧化物半导体电路中构建，而在传输晶体管逻辑配置中仅使用三对 n 型和 p 型场效应晶体管。
