Integrated Nanosystems Research Facility, Departmental of Electrical Engineering and Computer Science, University of California, Irvine, CA 92697, USA.
Nat Nanotechnol. 2009 Dec;4(12):811-9. doi: 10.1038/nnano.2009.355. Epub 2009 Nov 29.
Electronic devices based on carbon nanotubes are among the candidates to eventually replace silicon-based devices for logic applications. Before then, however, nanotube-based radiofrequency transistors could become competitive for high-performance analogue components such as low-noise amplifiers and power amplifiers in wireless systems. Single-walled nanotubes are well suited for use in radiofrequency transistors because they demonstrate near-ballistic electron transport and are expected to have high cut-off frequencies. To achieve the best possible performance it is necessary to use dense arrays of semiconducting nanotubes with good alignment between the nanotubes, but techniques that can economically manufacture such arrays are needed to realize this potential. Here we review progress towards nanotube electronics for radiofrequency applications in terms of device physics, circuit design and the manufacturing challenges.
基于碳纳米管的电子设备是最终有望替代硅基设备用于逻辑应用的候选者之一。然而在此之前，基于纳米管的射频晶体管可能在无线系统中的高性能模拟组件（如低噪声放大器和功率放大器）方面具有竞争力。单壁纳米管非常适合用于射频晶体管，因为它们表现出近弹道电子输运，并且有望具有高截止频率。为了获得最佳性能，有必要使用具有良好对准的半导体纳米管的密集阵列，但需要能够经济地制造这种阵列的技术来实现这种潜力。在这里，我们根据器件物理、电路设计和制造挑战，综述了用于射频应用的纳米管电子学的进展。
