Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea. Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 08826, Republic of Korea.
Nanotechnology. 2019 Mar 29;30(13):132001. doi: 10.1088/1361-6528/aafbbe. Epub 2019 Jan 3.
Semiconducting single-walled carbon nanotube (SWNT) networks are promising for use as channel materials in field-effect transistors (FETs) in next-generation soft electronics, owing to their high intrinsic carrier mobility, mechanical flexibility, potential for low-cost production, and good processability. In this article, we review the recent progress related to carbon nanotube (CNT) devices in soft electronics by describing the materials and devices, processing methods, and example applications in soft electronic systems. First, solution-processed semiconducting SWNT deposition methods along with doping techniques used to achieve stable complementary metal-oxide-semiconductor devices are discussed. Various strategies for developing high-performance SWNT-based FETs, such as the proper material choices for the gates, dielectrics, and sources/drains of FETs, and methods of improving FET performance, such as hysteresis repression in SWNT-based FETs, are described next. These SWNT-based FETs have been used in flexible, stretchable, and wearable electronic devices to realize functionalities that could not be achieved using conventional silicon-based devices. We conclude this review by discussing the challenges faced by and outlook for CNT-based soft electronics.
半导体单壁碳纳米管 (SWNT) 网络有望在下一代软电子产品的场效应晶体管 (FET) 中用作沟道材料,因为它们具有较高的本征载流子迁移率、机械柔韧性、低成本生产的潜力和良好的可加工性。在本文中,我们通过描述材料和器件、处理方法以及软电子系统中的示例应用,综述了与软电子相关的碳纳米管 (CNT) 器件的最新进展。首先,讨论了用于实现稳定互补金属氧化物半导体器件的溶液处理半导体 SWNT 沉积方法和掺杂技术。接下来,描述了开发高性能基于 SWNT 的 FET 的各种策略,例如 FET 的栅极、电介质和源/漏极的合适材料选择,以及改善 FET 性能的方法,例如基于 SWNT 的 FET 中的迟滞抑制。这些基于 SWNT 的 FET 已用于柔性、可拉伸和可穿戴电子设备中,以实现传统硅基设备无法实现的功能。我们通过讨论基于 CNT 的软电子产品所面临的挑战和展望来结束这篇综述。