Subramanian V S, Epel Boris, Mailer Colin, Halpern Howard J
Center for EPR Imaging In Vivo Physiology, Department of Radiation and Cellular Oncology, University of Chicago, Chicago, IL 60637.
Concepts Magn Reson Part B Magn Reson Eng. 2009 Aug;35B(3):133-138. doi: 10.1002/cmr.b.20141.
In order to protect the low noise amplifier (LNA) in the receive arm of a pulsed 250 MHz EPR bridge, it is necessary to install as much isolation as possible between the power exciting the spin system and the LNA when high power is present in the receive arm of the bridge, while allowing the voltage induced by the magnetization in the spin sample to be passed undistorted and undiminished to the LNA once power is reduced below the level that can cause a LNA damage. We discuss a combination of techniques to accomplish this involving the power-routing circulator in the bridge, a second circulator acting as an isolator with passive shunt PIN diodes immediately following the second circulator. The low resistance of the forward biased PIN diode passively generates an impedance mismatch at the second circulator output port during the high power excitation pulse and resonator ring down. The mismatch reflects the high power to the remaining port of the second circulator, dumping it into a system impedance matched load. Only when the power diminishes below the diode conduction threshold will the resistance of the PIN diode rise to a value much higher than the system impedance. This brings the device into conduction mode. We find that the present design passively limits the output power to 14 dBm independent of the input power. For high input power levels the isolation may exceed 60 dB. This level of isolation is sufficient to fully protect the LNA of pulse EPR bridge.
为了保护250 MHz脉冲电子顺磁共振(EPR)桥接器接收臂中的低噪声放大器(LNA),当桥接器接收臂存在高功率时,有必要在激励自旋系统的电源与LNA之间尽可能多地设置隔离,同时当功率降低到不会对LNA造成损坏的水平以下时,要让自旋样品中的磁化感应电压不失真、不衰减地传输到LNA。我们讨论了一系列技术组合来实现这一点,包括桥接器中的功率路由环行器,以及紧接着的第二个用作隔离器的环行器,并在其后接有无源并联PIN二极管。在高功率激励脉冲和谐振器衰减期间,正向偏置PIN二极管的低电阻会在第二个环行器输出端口被动地产生阻抗失配。这种失配会将高功率反射到第二个环行器的其余端口,将其泄放到系统阻抗匹配负载中。只有当功率降低到低于二极管导通阈值时,PIN二极管的电阻才会上升到远高于系统阻抗的值。这会使器件进入导通模式。我们发现,当前设计可将输出功率被动限制在14 dBm,与输入功率无关。对于高输入功率水平,隔离度可能超过60 dB。这种隔离水平足以充分保护脉冲EPR桥接器的LNA。