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掺杂石墨烯中的扩展范霍夫奇点和超导不稳定性。

Extended van Hove singularity and superconducting instability in doped graphene.

机构信息

Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA.

出版信息

Phys Rev Lett. 2010 Apr 2;104(13):136803. doi: 10.1103/PhysRevLett.104.136803.

Abstract

We have investigated the effects of doping on a single layer of graphene using angle-resolved photoemission spectroscopy. We show that many-body interactions severely warp the Fermi surface, leading to an extended van Hove singularity (EVHS) at the graphene M point. The ground state properties of graphene with such an EVHS are calculated, analyzing the competition between a magnetic instability and the tendency towards superconductivity. We find that the latter plays the dominant role as it is enhanced by the strong modulation of the interaction along the Fermi line, leading to an energy scale for the onset of the pairing instability as large as 1 meV when the Fermi energy is sufficiently close to the EVHS.

摘要

我们使用角分辨光电子能谱研究了掺杂对单层石墨烯的影响。我们表明,多体相互作用严重扭曲了费米表面,导致在石墨烯 M 点出现扩展的范霍夫奇点(EVHS)。我们计算了具有这种 EVHS 的石墨烯的基态性质,分析了磁不稳定性与超导性倾向之间的竞争。我们发现,由于沿费米线的相互作用的强烈调制增强了超导性,后者起着主导作用,导致当费米能级足够接近 EVHS 时,配对不稳定性的起始能标高达 1 毫电子伏特。

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