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基于半月板限制的三维电沉积技术直接书写线键合。

Meniscus-confined three-dimensional electrodeposition for direct writing of wire bonds.

机构信息

Department of Mechanical Science and Engineering, University of Illinois, 1206 West Green Street, Urbana, IL 61801, USA.

出版信息

Science. 2010 Jul 16;329(5989):313-6. doi: 10.1126/science.1190496.

Abstract

Continued progress in the electronics industry depends on downsizing, to a few micrometers, the wire bonds required for wiring integrated chips into circuit boards. We developed an electrodeposition method that exploits the thermodynamic stability of a microscale or nanoscale liquid meniscus to "write" pure copper and platinum three-dimensional structures of designed shapes and sizes in an ambient air environment. We demonstrated an automated wire-bonding process that enabled wire diameters of less than 1 micrometer and bond sizes of less than 3 micrometers, with a breakdown current density of more than 10(11) amperes per square meter for the wire bonds. The technology was used to fabricate high-density and high-quality interconnects, as well as complex three-dimensional microscale and even nanoscale metallic structures.

摘要

电子行业的持续进步取决于将连接集成电路芯片到电路板所需的金属线缩小到几微米。我们开发了一种电沉积方法,该方法利用微尺度或纳米尺度液体弯月面的热力学稳定性,在环境空气环境中“书写”纯铜和铂的设计形状和尺寸的三维结构。我们展示了一种自动化的金属丝键合工艺,能够实现直径小于 1 微米的金属丝和小于 3 微米的键合尺寸,金属丝的击穿电流密度超过每平方米 10(11)安培。该技术用于制造高密度和高质量的互连,以及复杂的三维微尺度甚至纳米尺度的金属结构。

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