Office of Electronic Miniaturization, University of Alaska, Fairbanks, AK, 99701, USA.
Nanoscale Res Lett. 2009 Aug 28;4(12):1421-7. doi: 10.1007/s11671-009-9414-7.
The phenomenon of persistent photoconductivity is elusive and has not been addressed to an extent to attract attention both in micro and nanoscale devices due to unavailability of clear material systems and device configurations capable of providing comprehensive information. In this work, we have employed a nanostructured (nanowire diameter 30-65 nm and 5 μm in length) ZnO-based metal-semiconductor-metal photoconductor device in order to study the origin of persistent photoconductivity. The current-voltage measurements were carried with and without UV illumination under different oxygen levels. The photoresponse measurements indicated a persistent conductivity trend for depleted oxygen conditions. The persistent conductivity phenomenon is explained on the theoretical model that proposes the change of a neutral anion vacancy to a charged state.
持续光电导现象难以捉摸,由于缺乏能够提供全面信息的明确材料体系和器件结构,因此在微纳尺度器件中尚未得到充分关注。在这项工作中,我们采用了一种纳米结构(纳米线直径为 30-65nm,长度为 5μm)的 ZnO 基金属-半导体-金属光电导器件,以研究持续光电导现象的起源。在不同氧水平下,进行了有和没有紫外光照射的电流-电压测量。光响应测量表明,在耗尽氧条件下存在持续电导趋势。持续电导现象的理论模型解释为中性阴离子空位向带电状态的变化。