Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Nanoscale Res Lett. 2010 Mar 31;5(6):941-8. doi: 10.1007/s11671-010-9586-1.
Thin-walled, open-ended, and well-aligned N-doped carbon nanotubes (CNTs) on the quartz slides were synthesized by using acetonitrile as carbon sources. As-obtained products possess large thin-walled index (TWI, defined as the ratio of inner diameter and wall thickness of a CNT). The effect of temperature on the growth of CNTs using acetonitrile as the carbon source was also investigated. It is found that the diameter, the TWI of CNTs increase and the Fe encapsulation in CNTs decreases as the growth temperature rises in the range of 780-860°C. When the growth temperature is kept at 860°C, CNTs with TWI = 6.2 can be obtained. It was found that the filed-emission properties became better as CNT growth temperatures increased from 780 to 860°C. The lowest turn-on and threshold field was 0.27 and 0.49 V/μm, respectively. And the best field-enhancement factors reached 1.09 × 105, which is significantly improved about an order of magnitude compared with previous reports. In this study, about 30 × 50 mm2 free-standing film of thin-walled open-ended well-aligned N-doped carbon nanotubes was also prepared. The free-standing film can be transferred easily to other substrates, which would promote their applications in different fields.
在石英片上合成了具有薄壁、开口和良好对齐的氮掺杂碳纳米管(CNTs),其碳源为乙腈。所获得的产物具有较大的薄壁指数(TWI,定义为 CNT 内径与壁厚的比值)。还研究了温度对以乙腈为碳源生长 CNTs 的影响。结果发现,在 780-860°C 的范围内,随着生长温度的升高,CNTs 的直径、TWI 增大,而 CNTs 中的 Fe 包封减少。当生长温度保持在 860°C 时,可以获得 TWI = 6.2 的 CNTs。研究发现,随着 CNT 生长温度从 780°C 升高到 860°C,场发射性能得到改善。最低开启和阈值电场分别为 0.27 和 0.49 V/μm。最佳场增强因子达到 1.09×105,与之前的报道相比,显著提高了约一个数量级。在这项研究中,还制备了约 30×50mm2 的薄壁开口良好对齐的氮掺杂碳纳米管的独立薄膜。该独立薄膜可以很容易地转移到其他基底上,这将促进它们在不同领域的应用。