Muñoz-Gamarra Jose Luis, Uranga Arantxa, Barniol Nuria
Department of Electronics Engineering, Universitat Autònoma de Barcelona (UAB), Barcelona 08193, Spain.
Micromachines (Basel). 2016 Feb 15;7(2):30. doi: 10.3390/mi7020030.
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good / (10³) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 μm (length) × 0.2 μm (100 nm width + 100 nm gap) = 0.7 μm² which is the smallest reported one using a top-down fabrication approach.
这项工作展示了采用片内CMOS-MEMS方法，利用商用互补金属氧化物半导体（CMOS）技术（ST 65纳米）来获得铜纳米机电（NEMS）继电器的可行性。我们报告了接触模式纳米机电开关的实验演示，该开关具有低工作电压（5.5 V）、良好的开/关（10³）比、陡峭的亚阈值摆幅（4.3 mV/十倍频程）以及最小尺寸（3.50μm×100 nm×180 nm，间隙为100 nm）。基于这些尺寸，开关的可操作单元面积将为3.5μm（长度）×0.2μm（100 nm宽度 + 100 nm间隙） = 0.7μm²，这是采用自上而下制造方法所报道的最小面积。
