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一维硼纳米结构:预测、合成、表征及应用。

One-dimensional boron nanostructures: Prediction, synthesis, characterizations, and applications.

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100080, P. R. China.

出版信息

Nanoscale. 2010 Aug;2(8):1375-89. doi: 10.1039/c0nr00051e. Epub 2010 Jun 8.

Abstract

One-dimensional (1D) boron nanostructures are very potential for nanoscale electronic devices since their physical properties including electric transport and field emission have been found very promising as compared to other well-developed 1D nanomaterials. In this article, we review the current progress that has been made on 1D boron nanostructures in terms of theoretical prediction, synthetic techniques, characterizations and potential applications. To date, the synthesis of 1D boron nanostructures has been well-developed. The popular structures include nanowires, nanobelts, and nanocones. Some of these 1D nanostructures exhibited improved electric transport properties over bulk boron materials as well as promising field emission properties. By current experimental findings, 1D boron nanostructures are promising to be one of core materials for future nanodevices. More efforts are expected to be made in future on the controlled growth of 1D boron nanostructures and tailoring their physical properties.

摘要

一维(1D)硼纳米结构在纳米电子器件方面具有很大的潜力,因为与其他成熟的一维纳米材料相比,其物理性质(包括电子输运和场发射)非常有前景。本文综述了一维硼纳米结构在理论预测、合成技术、特性和潜在应用方面的最新进展。迄今为止,一维硼纳米结构的合成已经得到了很好的发展。流行的结构包括纳米线、纳米带和纳米锥。其中一些一维纳米结构表现出比体相硼材料更好的电子输运性能和有前途的场发射性能。根据目前的实验结果,一维硼纳米结构有望成为未来纳米器件的核心材料之一。未来有望在一维硼纳米结构的可控生长和物理性质的调整方面做出更多的努力。

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