IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Phys Rev Lett. 2010 Jul 16;105(3):035702. doi: 10.1103/PhysRevLett.105.035702. Epub 2010 Jul 14.
When GaAs is heated in vacuum, it decomposes into Ga and As as it evaporates. Real-time in situ surface electron microscopy reveals striking bursts of "daughter" droplet nucleation and growth when coalescence of large "parent" droplets exposes nonplanar surface regions. We analyze the behavior, predicting a morphology-dependent congruent evaporation temperature. Based on this we propose a new approach for the self-assembly and positioning of quantum structures via droplet epitaxy, which we demonstrate at the proof-of-concept level.
当 GaAs 在真空中加热时，随着蒸发，它会分解成 Ga 和 As。实时原位表面电子显微镜揭示了当大“母”液滴合并暴露非平面表面区域时，“子”液滴成核和生长的惊人爆发。我们分析了这种行为，预测了与形貌相关的一致蒸发温度。基于此，我们提出了一种通过液滴外延实现量子结构自组装和定位的新方法，并在概念验证水平上进行了演示。
