Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
Small. 2010 Nov 22;6(22):2553-7. doi: 10.1002/smll.201000522.
Multigigahertz flexible electronics are attractive and have broad applications. A gate-after-source/drain fabrication process using preselectively doped single-crystal silicon nanomembranes (SiNM) is an effective approach to realizing high device speed. However, further downscaling this approach has become difficult in lithography alignment. In this full paper, a local alignment scheme in combination with more accurate SiNM transfer measures for minimizing alignment errors is reported. By realizing 1 μm channel alignment for the SiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated. These results indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
兆赫级柔性电子产品具有吸引力，应用广泛。采用预掺杂单晶硅纳米膜（SiNM）的源漏后置栅工艺是实现高速器件的有效方法。然而，在光刻对准方面，进一步缩小这种方法的尺寸变得困难。在本文中，我们报道了一种局部对准方案，并结合更精确的 SiNM 转移措施，以最小化对准误差。通过在软塑料衬底上实现 SiNM 的 1 μm 沟道对准，展示了具有 12 GHz 最大振荡频率的记录速度的薄膜晶体管。这些结果表明，经过适当处理的 SiNM 具有用于高性能柔性电子产品的巨大潜力。
