Nat Mater. 2010 Dec;9(12):980-3. doi: 10.1038/nmat2857. Epub 2010 Oct 3.
Modern fabrication technology has enabled the study of submicron ferromagnetic strips with a particularly simple domain structure, allowing single, well-defined domain walls to be isolated and characterized. However, these domain walls have complex field-driven dynamics. The wall velocity initially increases with field, but above a certain threshold the domain wall abruptly slows down, accompanied by periodic transformations of the domain wall structure. This behaviour is potentially detrimental to the speed and proper functioning of proposed domain-wall-based devices, and although methods for suppression of the breakdown have been demonstrated in simulations, a convincing experimental demonstration is lacking. Here, we show experimentally that a series of cross-shaped traps acts to prevent transformations of the domain wall structure and increase the domain wall velocity by a factor of four compared to the maximum velocity on a plain strip. Our results suggest a route to faster and more reliable domain wall devices for memory, logic and sensing.
现代制造技术使得研究具有特别简单畴结构的亚微米级铁磁条成为可能，从而可以隔离和表征单个、明确定义的畴壁。然而，这些畴壁具有复杂的场驱动动力学。畴壁速度最初随场增加，但超过一定阈值后，畴壁突然减速，同时畴壁结构发生周期性转变。这种行为可能会对基于畴壁的器件的速度和正常功能造成损害，尽管在模拟中已经证明了抑制这种破坏的方法，但缺乏令人信服的实验证明。在这里，我们通过实验表明，一系列十字形陷波结构可以防止畴壁结构的转变，并使畴壁速度相对于纯条带的最大速度提高了 4 倍。我们的结果为更快、更可靠的用于存储、逻辑和传感的畴壁器件提供了一种途径。
