SPINTEC, UMR-8191, CEA/CNRS/UJF/GINP, INAC, F-38054 Grenoble, France.
Nat Mater. 2011 Jun;10(6):419-23. doi: 10.1038/nmat3020. Epub 2011 May 15.
The propagation of magnetic domain walls induced by spin-polarized currents has launched new concepts for memory and logic devices. A wave of studies focusing on permalloy (NiFe) nanowires has found evidence for high domain-wall velocities (100 m s(-1); refs,), but has also exposed the drawbacks of this phenomenon for applications. Often the domain-wall displacements are not reproducible, their depinning from a thermally stable position is difficult and the domain-wall structural instability (Walker breakdown) limits the maximum velocity. Here, we show that the combined action of spin-transfer and spin-orbit torques offers a comprehensive solution to these problems. In an ultrathin Co nanowire, integrated in a trilayer with structural inversion asymmetry (SIA), the high spin-torque efficiency facilitates the depinning and leads to high mobility, while the SIA-mediated Rashba field controlling the domain-wall chirality stabilizes the Bloch domain-wall structure. Thus, the high-mobility regime is extended to higher current densities, allowing domain-wall velocities up to 400 m s(-1).
由自旋极化电流诱导的磁畴壁的传播为存储和逻辑器件带来了新概念。一波专注于坡莫合金(NiFe)纳米线的研究已经找到了高畴壁速度(100 m s(-1);参考文献)的证据,但也暴露了这种现象在应用中的缺点。通常情况下,畴壁位移不可重复,它们很难从热稳定位置解钉,畴壁结构不稳定性(Walker 击穿)限制了最大速度。在这里,我们表明,自旋转移和自旋轨道扭矩的联合作用为这些问题提供了全面的解决方案。在一个具有结构反转不对称性(SIA)的超薄 Co 纳米线中,高自旋扭矩效率促进了解钉并导致高迁移率,而 SIA 介导的 Rashba 场控制畴壁手性稳定了 Bloch 畴壁结构。因此,高迁移率区域扩展到更高的电流密度,允许畴壁速度高达 400 m s(-1)。