School of Physics, Shandong University, Jinan 250100, People's Republic of China.
Nanotechnology. 2011 Jan 28;22(4):045603. doi: 10.1088/0957-4484/22/4/045603. Epub 2010 Dec 20.
A simple yet versatile nanoetching process in porosifying and 'machining' GaN is reported in this work. By combining different porosifying conditions through potentiostatic modulation or embedding doping design, we are able to separate and lift off GaN layers over a macroscopic area (≥cm(2)). Strain relaxation and single crystallinity are confirmed by Raman and transmission electron microscopy, respectively. This method is expected to open up a new dimension in epitaxy, design and manufacture of GaN heterostructures and devices.
本工作报道了一种在 GaN 中进行多孔化和“加工”的简单而通用的纳米刻蚀工艺。通过在恒电位调制或嵌入式掺杂设计中结合不同的多孔化条件，我们能够在宏观区域（≥cm(2))上分离和剥离 GaN 层。应变弛豫和单晶结构分别通过拉曼和透射电子显微镜得到证实。该方法有望为 GaN 异质结构和器件的外延、设计和制造开辟新的维度。
