Department of Physics and Centre for Computational Science and Engineering, National University of Singapore, Singapore 117542, Republic of Singapore.
Phys Rev Lett. 2010 Nov 26;105(22):225901. doi: 10.1103/PhysRevLett.105.225901. Epub 2010 Nov 24.
We provide a topological understanding of the phonon Hall effect in dielectrics with Raman spin-phonon coupling. A general expression for phonon Hall conductivity is obtained in terms of the Berry curvature of band structures. We find a nonmonotonic behavior of phonon Hall conductivity as a function of the magnetic field. Moreover, we observe a phase transition in the phonon Hall effect, which corresponds to the sudden change of band topology, characterized by the altering of integer Chern numbers. This can be explained by touching and splitting of phonon bands.
我们提供了一个在具有拉曼自旋声子耦合的介电材料中对声子 Hall 效应的拓扑理解。声子 Hall 电导率的一个一般表达式是用能带结构的 Berry 曲率来表示的。我们发现声子 Hall 电导率作为磁场的函数具有非单调行为。此外,我们观察到声子 Hall 效应中的一个相变,这对应于能带拓扑的突然变化,其特征是整数 Chern 数的改变。这可以通过声子能带的接触和分裂来解释。