Institute of Scientific and Industrial Research, Osaka University , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan.
Nano Lett. 2011 May 11;11(5):2114-8. doi: 10.1021/nl200707n. Epub 2011 Apr 8.
Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.
金属-氧化物-金属结中的电阻开关（RS）记忆效应是下一代通用非易失性存储器的一个迷人现象。然而，对 RS 电特性的缺乏理解阻碍了其应用。在这里，我们通过利用平面单氧化物纳米线器件来证明钴氧化物中双极 RS 的电特性，如导电机理和开关位置。利用场效应器件和多探针测量的实验表明，钴氧化物中的纳米级 RS 源于阴极附近的氧化还原事件，具有 p 型导电路径，这与流行的基于氧空位的模型相反。
