Energy Systems Division, Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60439, United States.
ACS Nano. 2011 Jun 28;5(6):4600-6. doi: 10.1021/nn2003234. Epub 2011 May 24.
Sequential infiltration synthesis (SIS), combining stepwise molecular assembly reactions with self-assembled block copolymer (BCP) substrates, provides a new strategy to pattern nanoscopic materials in a controllable way. The selective reaction of a metal precursor with one of the pristine BCP domains is the key step in the SIS process. Here we present a straightforward strategy to selectively modify self-assembled polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) BCP thin films to enable the SIS of a variety of materials including SiO(2), ZnO, and W. The selective and controlled interaction of trimethyl aluminum with carbonyl groups in the PMMA polymer domains generates Al-CH(3)/Al-OH sites inside the BCP scaffold which can seed the subsequent growth of a diverse range of materials without requiring complex block copolymer design and synthesis.
顺序渗透合成（SIS）将逐步的分子组装反应与自组装嵌段共聚物（BCP）基底相结合，为可控地图案化纳米材料提供了一种新策略。金属前体与原始 BCP 域之一的选择性反应是 SIS 过程中的关键步骤。在这里，我们提出了一种简单的策略来选择性地修饰自组装聚苯乙烯嵌段聚甲基丙烯酸甲酯（PS-b-PMMA）BCP 薄膜，以实现包括 SiO(2)、ZnO 和 W 在内的各种材料的 SIS。三甲基铝与 PMMA 聚合物域中的羰基的选择性和受控相互作用在 BCP 支架内生成 Al-CH(3)/Al-OH 位，这些位可以为随后的各种材料的生长提供种子，而不需要复杂的嵌段共聚物设计和合成。
