Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden.
Nano Lett. 2011 Jun 8;11(6):2286-90. doi: 10.1021/nl200492g. Epub 2011 May 23.
We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).
我们已经成功合成了掺硫化氢的磷化铟纳米线，其硫浓度高达 1.4%。最高掺杂浓度的纳米线具有纯纤锌矿晶体结构，而体材料磷化铟则具有闪锌矿结构。这些纳米线显示出的光致发光与带隙相比有很强的蓝移，完全进入可见光范围。我们发现了在带边以上约 0.23 电子伏特处存在第二个导带最小值的证据，这与最近的理论预测非常吻合。电测量显示出高导电性和击穿电流为 10(7) A/cm(2)。
