Xu Tao, Sulerzycki Julien, Nys Jean Philippe, Patriarche Gilles, Grandidier Bruno, Stiévenard Didier
Département ISEN, Institut d'Electronique, de Microélectronique et de Nanotechnologie, IEMN (CNRS, UMR 8520), 41 bd Vauban, 59046 Lille Cedex, France.
Nanoscale Res Lett. 2011 Feb 2;6(1):113. doi: 10.1186/1556-276X-6-113.
We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length dependence on their diameter indicates that the growth of the NWs predominantly proceeds through the diffusion of adatoms from the substrate up along the sidewalls, difference in the sidewall roughness qualitatively explains the length variation measured between both types of NWs. The formation of atomically flat {111} sidewalls on the <110>-oriented Ge NWs accounts for a larger diffusion length.
我们报道了通过分子束外延在Si(111)表面生长Si和Ge纳米线（NWs）的情况。Si纳米线垂直于表面生长，而Ge纳米线发现有两种生长轴类型。用电子显微镜对这两种类型的纳米线进行的结构研究表明，它们各自侧壁的粗糙度存在显著差异。由于对其长度与直径关系的研究表明，纳米线的生长主要通过吸附原子从衬底沿着侧壁向上扩散进行，侧壁粗糙度的差异定性地解释了两种类型纳米线之间测量到的长度变化。<110>取向的Ge纳米线上原子级平整的{111}侧壁的形成导致了更大的扩散长度。
