Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India.
Microsc Microanal. 2011 Oct;17(5):759-65. doi: 10.1017/S1431927611000559. Epub 2011 Jun 24.
Structure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.
使用封装的固相外延法在 p-Si（111）衬底上生长的 Gd2O3-Ge-Gd2O3 异质结构中，对稀土氧化物-Ge 界面的结构和化学性质进行了研究，采用了各种透射电子显微镜技术。使用重构相和出射面的振幅对两个界面的结构进行了研究。使用元素映射、高角度环形暗场成像、电子能量损失光谱和能量色散 X 射线光谱研究了界面的化学性质。结果表明，两个界面都具有结构和化学的突然性，这对于保持所需的量子势垒结构至关重要。
